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Results 1 to 25 of 2189

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Light-induced defect generation of a-Si: H at below-room-temperaturePARK, H.-R.Solid state communications. 1994, Vol 91, Num 2, pp 153-156, issn 0038-1098Article

Texturogeometric deformation effects is some metal-hydrogen systemsSPIVAK, L. V; KATS, M. YA.Physics of metals and metallography. 1992, Vol 74, Num 3, pp 270-273, issn 0031-918XArticle

Magnetic resonance spectroscopy of hydrogen-passivated double donors in siliconZEVENBERGEN, I. S; MARTYNOV, YU. V; BERG RASMUSSEN, F et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1996, Vol 36, Num 1-3, pp 138-141, issn 0921-5107Conference Paper

On the dangling-bond relaxation problem in hydrogenated amorphous siliconKAZANSKII, A. G; MAO YI; KONG GUANGLIN et al.Solid state communications. 1994, Vol 91, Num 6, pp 447-449, issn 0038-1098Article

Hyperfine interaction of impurity hydrogen atoms in cesium halidesBUCHER, M.Physica status solidi. B. Basic research. 1993, Vol 180, Num 2, pp K83-K85, issn 0370-1972Article

Einfluss von Bandverbiegungen an der Oberfläche auf die Fotoleitung von a-Si : H-Schichten = Influence of surface-band bending on the photoconduction of a-Si:H filmsSTÖTZEL, H; DELTSCHEW, R; WASCHPANOW, Y. A et al.Wissenschaftliche Zeitschrift der Technischen Universität Dresden. 1991, Vol 40, Num 5-6, pp 121-125, issn 0043-6925Article

Two dimensional image sensors based on amorphous silicon alloy p-i-n diodesDE CESARE, G; DI ROSA, P; LA MONICA, S et al.Journal of non-crystalline solids. 1993, Vol 164-66, pp 789-792, issn 0022-3093, 2Conference Paper

On the nature of the paramagnetic defects in hydrogenated amorphous silicon nitrideCHEN, D. Q; VINER, J. M; TAYLOR, P. C et al.Solid state communications. 1996, Vol 98, Num 8, pp 745-750, issn 0038-1098Article

Effect of the hydrogen induced degradation of steel on the internal friction spectraLUNARSKA, E; OSOSKOV, Y; JAGODZINSKI, Y et al.Journal de physique. IV. 1996, Vol 6, Num 8, pp C8.59-C8.62, issn 1155-4339Conference Paper

Si-H stretch modes of hydrogen-vacancy defects in siliconBECH NIELSEN, B; HOFFMANN, L; BUDDE, M et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1996, Vol 36, Num 1-3, pp 259-263, issn 0921-5107Conference Paper

Carrier injection from amorphous silicon carbide films into organic hole transport materialsYAJIMA, T; KAWAMURA, T; DOHMARU, T et al.The Journal of imaging science and technology. 1993, Vol 37, Num 4, pp 399-404, issn 1062-3701Article

Influence of intense illumination on dispersive hydrogen diffusion in a-Si:HGREIM, O; WEBER, J.F; BAER, Y et al.Solid state communications. 1995, Vol 93, Num 9, pp 719-723, issn 0038-1098Article

Resistivity studies of cubic americium hydrides from 20 to 300 KCORT, B; WARD, J. W; VIGIL, F. A et al.Journal of alloys and compounds. 1995, Vol 224, Num 2, pp 237-240, issn 0925-8388Article

Response time measurements in microcrystalline siliconSCHWARZ, R; WANG, F; GREBNER, S et al.Journal of non-crystalline solids. 1993, Vol 164-66, pp 477-480, issn 0022-3093, 1Conference Paper

Photocurrent multiplication in amorphous silicon carbide filmsHIRAMOTO, M; YOSHIMURA, K; YOKOYAMA, M et al.The Journal of imaging science and technology. 1993, Vol 37, Num 2, pp 192-196, issn 1062-3701Article

Strategies for improving the idle performance of a spark-ignited gasoline engineCHANGWEI JI; SHUOFENG WANG.International journal of hydrogen energy. 2012, Vol 37, Num 4, pp 3938-3944, issn 0360-3199, 7 p.Conference Paper

Investigation of H+ implanted silicon wafers with two-beam cross-modulation photocarrier radiometryTOLEV, J; MANDELIS, A.The European physical journal. Special topics. 2008, Vol 153, pp 295-297, 3 p.Conference Paper

Interstitial H2 in germanium by Raman scattering and ab initio calculationsHILLER, M; LAVROV, E. V; WEBER, J et al.Physical review B. Condensed matter and materials physics. 2005, Vol 72, Num 15, pp 153201.1-153201.4, issn 1098-0121Article

A study of the mobility and trapping of minor hydrogen concentrations in diamond in three dimensions using quantitative ERDA microscopyCONNELL, S. H; SELLSCHOP, J. P. F; BUTLER, J. E et al.Diamond and related materials. 1998, Vol 7, Num 11-12, pp 1714-1718, issn 0925-9635Article

Solubility and diffusion of hydrogen in hydrogenated crystalline and amorphous siliconBEYER, W; ZASTROW, U.Journal of non-crystalline solids. 1998, Vol 227-30, pp 880-884, issn 0022-3093, bConference Paper

Gas-source growth of group IV semiconductors : II. Growth regimes and the effect of hydrogenOWEN, J. H. G; MIKI, K; BOWLER, D. R et al.Surface science. 1997, Vol 394, Num 1-3, pp 91-104, issn 0039-6028Article

Isotope effect of diffusion and electromigration of hydrogen in nickelPIETRZAK, R.Journal of materials science letters. 1996, Vol 15, Num 8, pp 731-733, issn 0261-8028Article

STM analysis of wet-chemically prepared H-Si(001) surfaceMORITA, Y; TOKUMOTO, H.Applied surface science. 1996, Vol 100-01, pp 440-443, issn 0169-4332Conference Paper

Silicon interstitials generation during the exposure of silicon to hydrogen plasmaTONINI, R; MONELLI, A; CORNI, F et al.Materials science & engineering. B, Solid-state materials for advanced technology. 1996, Vol 36, Num 1-3, pp 158-161, issn 0921-5107Conference Paper

Electron spin resonance in microcrystalline cubic boron nitride/amorphous hydrogenated boron nitride mixed phase thin filmsSHU-HAN LIN; BROWN, I. M; FELDMAN, B. J et al.Solid state communications. 1995, Vol 96, Num 6, pp 421-425, issn 0038-1098Article

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